Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: transistorDescription: 2170MHz, 28W AVG., 28V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFET3669 -
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Category: transistorDescription: NXP MRFE6VP100HR5 RF transistor, LDMOS, 100W, NI-78034991+$912.228010+$880.220050+$876.2190100+$872.2180150+$865.8164250+$860.2150500+$854.61361000+$848.2120 -
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Category: transistorDescription: RF Power Transistor,720 to 960MHz, 280W, Typ Gain in dB is 20 @ 960MHz, 28V, LDMOS, SOT182335181+$1208.755910+$1197.767225+$1192.272950+$1186.7785100+$1181.2842150+$1175.7898250+$1170.2955500+$1164.8011 -
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Category: transistorDescription: Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768MHz, 920-960MHz, 3.2W, 28V24411+$848.476910+$818.705850+$814.9844100+$811.2630150+$805.3088250+$800.0989500+$794.88891000+$788.9347 -
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Category: transistorDescription: RF Power Transistor,2700 to 2900MHz, 320W, Typ Gain in dB is 13.3 @ 2900MHz, 30V, LDMOS, SOT18298492 -
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Category: transistorDescription: RF Power Transistor,2 to 500MHz, 600W, Typ Gain in dB is 25 @ 225MHz, 50V, LDMOS, SOT178743731+$3550.049810+$3517.776625+$3501.640050+$3485.5034100+$3469.3669150+$3453.2303250+$3437.0937500+$3420.9571 -
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Category: transistorDescription: RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24.6 @ 230MHz, 50V, LDMOS, SOT182950681+$1352.301510+$1340.007925+$1333.861050+$1327.7142100+$1321.5674150+$1315.4206250+$1309.2737500+$1303.1269 -
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Category: transistorDescription: Pulsed Lateral N-Channel RF Power MOSFET, 1090MHz, 10W, 50V50321+$595.803910+$574.898550+$572.2853100+$569.6722150+$565.4911250+$561.8326500+$558.17421000+$553.9931 -
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Category: transistorDescription: RF Power Transistor,2700 to 2900MHz, 320W, Typ Gain in dB is 13.3 @ 2900MHz, 30V, LDMOS, SOT17874611 -
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Category: transistorDescription: RF MOSFET Transistors MOSFET 1300MHz 250W 50V42861+$4521.313510+$4480.210725+$4459.659250+$4439.1078100+$4418.5564150+$4398.0050250+$4377.4535500+$4356.9021 -
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Category: transistorDescription: Bipolar Transistor - Bipolar Junction Transistor (BJT) AF TRANS GP BJT PNP 40V 0.2A884420+$0.499550+$0.4625100+$0.4440300+$0.4292500+$0.41811000+$0.41075000+$0.403310000+$0.3959 -
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Category: transistorDescription: ON Semiconductor MMBF4118 NChannel JFET transistor, Vds=10 V, Idss: 0.08 → 0.24mA, 3-pin SOT-23 package272310+$1.205650+$1.1430100+$1.0984300+$1.0716500+$1.04481000+$1.01802500+$0.97785000+$0.9689 -
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Category: transistorDescription: JFET VHF / UHFAmplifier Transistor N-Channel JFET VHF/UHF Amplifier Transistor N-Channel841510+$1.263650+$1.1981100+$1.1513300+$1.1232500+$1.09511000+$1.06702500+$1.02495000+$1.0156 -
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Category: transistorDescription: 2N channels 60V 30A23675+$5.643025+$5.225050+$4.9324100+$4.8070500+$4.72342500+$4.61895000+$4.577110000+$4.5144 -
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Category: transistorDescription: TSSOP P-CH 30V 4.5A72925+$14.426150+$13.8096200+$13.4644500+$13.37811000+$13.29172500+$13.19315000+$13.13157500+$13.0698 -
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Category: transistorDescription: RF Power Transistor,1 to 2000MHz, 10W, Typ Gain in dB is 18 @ 960MHz, 28V, LDMOS, SOT173150841+$158.901310+$154.756050+$151.5780100+$150.4726200+$149.6435500+$148.53811000+$147.84732000+$147.1564 -
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Category: transistorDescription: RF Power Transistor, 0.01 to 0.6GHz, 75W, 27dB, 50V, SOT1223-2, LDMOS19061+$295.740910+$288.025950+$282.1111100+$280.0538200+$278.5108500+$276.45351000+$275.16762000+$273.8818 -
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Category: transistorDescription: MOSFET RF N-CHAN 28V 28W NI-78020111+$561.749710+$547.095450+$535.8604100+$531.9525200+$529.0217500+$525.11391000+$522.67152000+$520.2291 -
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Category: transistorDescription: RF MOSFET Transistors 65V N-CH 1840MHz58261+$1675.610210+$1660.377425+$1652.761050+$1645.1446100+$1637.5282150+$1629.9117250+$1622.2953500+$1614.6789
